Faiz Dahmani
8Patents
2h-index
9Co-inventors
40Inventor score
Filing activity: Mar 5, 2007 → Jul 31, 2020
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US7682841B2 | Method of forming integrated circuit having a magnetic tunnel junction device | Emerging Cross-Sectional Technologies | 48 | Active |
| US9722177B2 | Resistive random access memory device with a solid electrolyte including a region made of a first metal oxide and doped by a second element distinct from the first metal | Electricity | 5 | Active |
| US8501525B2 | Method of fabrication of programmable memory microelectric device | Electricity | 2 | Active |
| US9431607B2 | Metal-oxide-based conductive-bridging random access memory (CBRAM) having the solid electrolyte doped with a second metal | Physics | 2 | Active |
| US8597975B2 | Method of fabricating a microelectronic device with programmable memory | Electricity | 0 | Active |
| US11145812B2 | Resistive random access memory device | Physics | 0 | Active |
| US11313030B2 | Method of forming a thin film of tantalum with low resistivity | Electricity | 0 | Active |
| US8268664B2 | Methods of manufacturing a semiconductor device; method of manufacturing a memory cell; semiconductor device; semiconductor processing device; integrated circuit having a memory cell | Emerging Cross-Sectional Technologies | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.