Crystal pulling systems and methods for producing monocrystalline ingots with reduced edge band defects
US11313049B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 19, 2016 |
| Grant date | Apr 26, 2022 |
| Priority date | — |
| Expiry date | Oct 19, 2036 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T117/1068
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A crystal pulling system for growing a monocrystalline ingot from a melt of semiconductor or solar-grade material includes a crucible for containing the melt of material, a pulling mechanism configured to pull the ingot from the melt along a pull axis, and a multi-stage heat exchanger defining a central passage for receiving the ingot as the ingot is pulled by the pulling mechanism. The heat exchanger defines a plurality of cooling zones arranged vertically along the pull axis of the crystal pulling system. The plurality of cooling zones includes two enhanced-rate cooling zones and a reduced-rate cooling zone disposed vertically between the two enhanced-rate cooling zones.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.