Process control metrology
US11313809B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | May 4, 2017 |
| Grant date | Apr 26, 2022 |
| Priority date | — |
| Expiry date | May 4, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L22/12
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
Methods and systems for estimating values of process parameters based on measurements of structures fabricated on a product wafer are presented herein. Exemplary process parameters include lithography dosage and exposure and lithography scanner aberrations. A measurement model is employed to estimate process parameter values from measurements of structures fabricated on a wafer by a particular fabrication process. The measurement model includes process parameters and geometric parameters of structures under measurement. In some embodiments, a model based regression of both a process model and a metrology model is employed to arrive at estimates of at least one process parameter value based on measurements of a fabricated structure. In some embodiments, a trained measurement model is employed to directly estimate process parameter values based on measurements of structures. The measurement model is trained based on simulated measurement signals associated with measurements of shape profiles generated by different sets of process parameter values.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.