Plasma processing apparatus
US11315759B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 8, 2019 |
| Grant date | Apr 26, 2022 |
| Priority date | — |
| Expiry date | Feb 8, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/683
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A plasma processing apparatus includes a processing chamber in which a wafer 1 is processed by using plasma, a radio-frequency power supply that supplies radio-frequency power for generating the plasma, a sample table 2 which is arranged in the processing chamber and in which the wafer 1 is mounted, and a DC power supply 106 which is electrically connected to the sample table 2 and which causes the sample table 2 to generate a suction force. The sample table 2 includes a protruded portion 201a that sucks the wafer 1 by the suction force and a level different portion 201b protruding from a lower portion of the protruded portion 201a. A ring 5 that can be in contact with a lower surface of the wafer 1 is provided outside the protruded portion 201a. A space portion 7 formed by the wafer 1, the protruded portion 201a, and the ring 5 is sealed in a state in which the wafer 1 is sucked to an upper surface of the protruded portion 201a of the sample table 2.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.