Substrate processing method and substrate processing apparatus
US11315795B2 · kind B2 · utility
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18Claims
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Key dates
| Filing date | Apr 6, 2021 |
| Grant date | Apr 26, 2022 |
| Priority date | — |
| Expiry date | Apr 8, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/334
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A substrate processing method performed in a substrate processing apparatus includes providing a substrate which has a first film composed of silicon only and a second film including silicon; and etching the first film by plasma formed from a mixed gas including a halogen-containing gas and a silicon-containing gas but not including an oxygen-containing gas.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.