Amorphous layers for reducing copper diffusion and method forming same
US11315829B2 · kind B2 · utility
1Cited by
1References
20Claims
0Family size
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Key dates
| Filing date | Jun 2, 2020 |
| Grant date | Apr 26, 2022 |
| Priority date | — |
| Expiry date | Jun 2, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L23/53295
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method includes depositing an etch stop layer over a first conductive feature, performing a first treatment to amorphize the etch stop layer, depositing a dielectric layer over the etch stop layer, etching the dielectric layer to form an opening, etching-through the etch stop layer to extend the opening into the etch stop layer, and filling the opening with a conductive material to form a second conductive feature.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.