Field-effect transistor with a total control of the electrical conductivity on its channel
US11316017B2 · kind B2 · utility
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14Claims
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Assignee
Inventor
Key dates
| Filing date | Sep 27, 2018 |
| Grant date | Apr 26, 2022 |
| Priority date | — |
| Expiry date | Jan 5, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D99/00
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The first object of the invention is directed to field-effect gate transistor comprising (a) a substrate, (b) a source terminal, (c) a drain terminal, and (d) a channel between the source terminal and the drain terminal, the channel being a layer of CuxCryO2 in which the y/x ratio is superior to 1. The field-effect gate transistor is remarkable in that the channel of CuxCryO2 presents a gradient of holes concentration. The second object of the invention is directed to a method for laser annealing a field-effect gate transistor in accordance with the first object of the invention.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.