Damien Lenoble
30Patents
5h-index
29Co-inventors
65Inventor score
Filing activity: Jun 4, 2003 → Nov 29, 2021
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US7960734B2 | FinFET field effect transistor insulated from the substrate | Emerging Cross-Sectional Technologies | 12 | Active |
| US7781315B2 | Finfet field effect transistor insulated from the substrate | Emerging Cross-Sectional Technologies | 12 | Active |
| US8034689B2 | Method for fabricating a semiconductor device and the semiconductor device made thereof | Electricity | 9 | Active |
| US7612420B2 | Method for doping a fin-based semiconductor device | Electricity | 9 | Active |
| US9939141B2 | Active thermal management device and thermal management method | Electricity | 5 | Active |
| US6806156B2 | Process for fabricating a MOS transistor of short gate length and integrated circuit comprising such a transistor | Electricity | 2 | Expired |
| US7449737B2 | Process for fabricating an integrated circuit comprising a photodiode, and corresponding integrated circuit | Electricity | 2 | Active |
| US9561523B2 | Controlled radical assisted polymerization | Electricity | 1 | Active |
| US7208377B2 | Silicon oxidation method | Electricity | 1 | Expired |
| US11041238B2 | SiO2 thin film produced by atomic layer deposition at room temperature | Chemistry; Metallurgy | 1 | Active |
| US7638844B2 | Manufacturing method of semiconductor-on-insulator region structures | Electricity | 1 | Active |
| US10273592B2 | Method of forming local nano/micro size structures of anodized metal | Mechanical Engineering; Lighting; Heating | 0 | Active |
| US7705427B2 | Integrated circuit comprising a gradually doped bipolar transistor | Electricity | 0 | Active |
| US11753718B2 | SiO2 thin film produced by atomic layer deposition at room temperature | Chemistry; Metallurgy | 0 | Active |
| US10457563B2 | Highly aminated self-assembling functionalized mesoporous silica nanoparticles and method of synthesis | Chemistry; Metallurgy | 0 | Active |
| US10689755B2 | Biphasic silica- and carbon nanotube-based material | Chemistry; Metallurgy | 0 | Active |
| US12366005B2 | Highly compact metal-CNT composites and manufacture thereof | Chemistry; Metallurgy | 0 | Active |
| US10988620B2 | Composite element comprising a biphasic silica and carbon nanotube-based material | Emerging Cross-Sectional Technologies | 0 | Active |
| US11124871B2 | Fluidized bed reactor adapted for the production of biphased systems | Performing Operations; Transporting | 0 | Active |
| US11873570B2 | Metal-CNT composite, production method and materials therefor | Performing Operations; Transporting | 0 | Active |
| US11316017B2 | Field-effect transistor with a total control of the electrical conductivity on its channel | Electricity | 0 | Active |
| US7601634B2 | Process for producing a contact pad on a region of an integrated circuit, in particular on the electrodes of a transistor | Electricity | 0 | Active |
| US7994008B2 | Transistor device with two planar gates and fabrication process | Electricity | 0 | Active |
| US11213487B2 | Negatively charged self-assembling supported lipid bilayer on mesoporous silica nanoparticles, method of synthesis and use as a nanovector | Human Necessities | 0 | Active |
| US7416950B2 | MOS transistor forming method | Electricity | 0 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.