Semiconductor transistor device and method of manufacturing the same

US11316043B2 · kind B2 · utility

Assignee

• Infineon Technologies Austria AG · AT

Inventors

• Robert Haase · Rancho Palos Verdes, US
• Jyotshna Bhandari · Villach, AT
• Heimo Hofer · Bodensdorf, AT
• Ling Ma · Huizhou, CN
• Ashita Mirchandani · El Segundo, US
• Harsh Naik · El Segundo, US
• Martin Poelzl · Ossiach, AT
• Martin Vielemeyer · Villach, AT
• Britta Wutte · Fürstenfeld, AT

Key dates

• Filing date: Dec 17, 2019
• Grant date: Apr 26, 2022
• Expiry date: Jan 23, 2040

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/671

Abstract

A transistor device with a gate electrode in a vertical gate trench is described. The gate electrode includes a silicon gate region and a metal inlay region. The silicon gate region forms at least a section of a sidewall of the gate electrode. The metal inlay region extends up from a lower end of the gate electrode.