Harsh Naik
10Patents
2h-index
25Co-inventors
50Inventor score
Filing activity: Jan 31, 2011 → Aug 22, 2023
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US8933506B2 | Diode structures with controlled injection efficiency for fast switching | Electricity | 14 | Active |
| US9685523B2 | Diode structures with controlled injection efficiency for fast switching | Electricity | 5 | Active |
| US9590096B2 | Vertical FET having reduced on-resistance | Electricity | 2 | Active |
| US10727331B2 | Semiconductor device having a reduced surface doping in an edge termination area, and method for manufacturing thereof | Electricity | 1 | Active |
| US11777026B2 | Power semiconductor device having low-k dielectric gaps between adjacent metal contacts | Electricity | 0 | Active |
| US12191385B2 | Semiconductor device having a current spreading region | Electricity | 0 | Active |
| US10868173B2 | Semiconductor device having an edge termination area with trench electrodes at different electric potentials, and method for manufacturing thereof | Electricity | 0 | Active |
| US11316043B2 | Semiconductor transistor device and method of manufacturing the same | Electricity | 0 | Active |
| US12119400B2 | Semiconductor transistor device and method of manufacturing the same | Electricity | 0 | Active |
| US12159933B2 | Semiconductor device with semiconductor mesas between adjacent gate trenches | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.