Method for controlling a spin qubit quantum device

US11321626B2 · kind B2 · utility

Assignee

• COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES · FR

Inventors

• Leo Bourdet · Saturargues, FR
• Louis HUTIN · Grenoble, FR
• Yann-Michel Niquet · Grenoble, FR
• Maud Vinet · Voiron, FR

Key dates

• Filing date: Jun 27, 2018
• Grant date: May 3, 2022
• Expiry date: May 12, 2039

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/518
• WIPO field: Micro-structural and nano-technology
• WIPO sector: Chemistry

Abstract

A method is described for controlling a spin qubit quantum device that includes a semiconducting portion, a dielectric layer covered by the semiconducting portion, a front gate partially covering an upper edge of the semiconducting portion, and a back gate. The method includes, during a manipulation of a spin state, the exposure of the device to a magnetic field B of value such that g·μB·B>min(Δ(Vbg)). The method also includes the application, on the rear gate, of an electrical potential Vbg of value such that Δ(Vbg)<g·μB·B+2|MSO|, and the application, on the front gate, of a confinement potential and an RF electrical signal triggering a change of spin state, with g corresponding to the Landé factor, μB corresponding to a Bohr magneton, Δ corresponding to an intervalley energy difference in the semiconducting portion, and MSO corresponding to the intervalley spin-orbit coupling.