Sputter target magnet
US11322338B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 29, 2018 |
| Grant date | May 3, 2022 |
| Priority date | — |
| Expiry date | Sep 7, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/3417
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A method for modifying magnetic field distribution in a deposition chamber is disclosed. The method includes the steps of providing a target magnetic field distribution, removing a first plurality of fixed magnets in the deposition chamber, replacing each of the first plurality of fixed magnets with respective ones of a second plurality of magnets, performing at least one of adjusting a position of at least one of the second plurality of the magnets, and adjusting a size of at least one of the second plurality of magnets, adjusting a magnetic flux of at least one of the second plurality of magnets, measuring the magnetic field distribution in the deposition chamber, and comparing the measured magnetic field distribution in the deposition chamber with the target magnetic field distribution.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.