Method of laser irradiation of a patterned semiconductor device
US11322358B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 14, 2019 |
| Grant date | May 3, 2022 |
| Priority date | — |
| Expiry date | Feb 2, 2039 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB23K2103/50
- WIPO fieldMachine tools
- WIPO sectorMechanical engineering
Abstract
Disclosed is a method of laser irradiation of a patterned semiconductor device including a periodic array of sub-wavelength fin-like structures, all fin-like structures upstanding from a base face of the semiconductor device and defining an upper face of the periodic array opposite the base face, each fin-like structure having: a width along a first direction parallel to the base face of the order of magnitude or smaller than the laser wavelength; a length along a second direction parallel to the base face and perpendicular to the first direction at least 3 times greater than the width; and a height along a third direction perpendicular to the base face. The method includes: generating a UV pulsed laser beam using a laser module; and irradiating at least a portion of the upper face with the laser beam.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.