Semiconductor device and manufacturing method thereof
US11322517B2 · kind B2 · utility
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18Claims
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Key dates
| Filing date | Sep 16, 2020 |
| Grant date | May 3, 2022 |
| Priority date | — |
| Expiry date | Nov 19, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B41/27
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a stack structure including conductive layers and insulating layers, which are alternately stacked; an opening including a first opening penetrating the stack structure and second openings protruding from the first opening; and a channel layer including channel regions located in the second openings and impurity regions located in the first opening, the impurity regions having an impurity concentration higher than that of the channel regions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.