Inductive device
US11322576B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 29, 2020 |
| Grant date | May 3, 2022 |
| Priority date | — |
| Expiry date | Oct 29, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/00
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
An inductive device includes an insulating layer, a lower magnetic layer, and an upper magnetic layer that are formed such that the insulating layer does not separate the lower magnetic layer and the upper magnetic layer at the outer edges or wings of the inductive device. The lower magnetic layer and the upper magnetic layer form a continuous magnetic layer around the insulating layer and the conductors of the inductive device. Magnetic leakage paths are provided by forming openings through the upper magnetic layer. The openings may be formed through the upper magnetic layer by semiconductor processes that have relatively higher precision and accuracy compared to semiconductor processes for forming the insulating layer such as spin coating. This reduces magnetic leakage path variation within the inductive device and from inductive device to inductive device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.