High voltage device

US11322609B2 · kind B2 · utility

Assignee

• TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. · TW

Inventors

• Hung-Sen Wang · Tainan, TW
• Yun-Ta Tsai · Santa Clara, US
• Ruey-Hsin Liu · Baoshan, TW
• Shih-Fen Huang · Zhubei City, TW
• Ho-Chun Liou · Baoshan, TW

Key dates

• Filing date: Jun 19, 2020
• Grant date: May 3, 2022
• Expiry date: Jun 19, 2040

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/109

Abstract

A high-voltage device includes a substrate, a first well region disposed in the substrate, at least a first isolation, a frame-like gate structure over the first well region and covering a portion of the first isolation, a drain region in the first well region and separated from the frame-like gate structure by the first isolation, and a source region separated from the drain region by the first isolation and the frame-like gate structure. The first well region, the drain region and the source region include a first conductivity type, and the substrate includes a second conductivity type. The first conductivity type and the second conductivity type are complementary to each other.