Hung-Sen Wang
11Patents
5h-index
19Co-inventors
59Inventor score
Filing activity: Nov 13, 2009 → Apr 27, 2022
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US8223534B2 | Raising programming currents of magnetic tunnel junctions using word line overdrive and high-k metal gate | Physics | 35 | Active |
| US8716852B2 | Micro-electro mechanical systems (MEMS) having outgasing prevention structures and methods of forming the same | Electricity | 22 | Active |
| US8878312B2 | Electrical bypass structure for MEMS device | Emerging Cross-Sectional Technologies | 15 | Active |
| US8451655B2 | MRAM cells and circuit for programming the same | Physics | 5 | Active |
| US9266714B2 | Micro-electro mechanical system (MEMS) structures and methods of forming the same | Electricity | 5 | Active |
| US8111544B2 | Programming MRAM cells using probability write | Physics | 4 | Active |
| US8879308B2 | Raising programming currents of magnetic tunnel junctions using word line overdrive and high-k metal gate | Physics | 0 | Active |
| US9331136B2 | Integrated circuit and method of fabricating the same | Electricity | 0 | Active |
| US11757034B2 | High voltage device | Electricity | 0 | Active |
| US11322609B2 | High voltage device | Electricity | 0 | Active |
| US9553140B2 | Integrated circuit and method of fabricating the same | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.