Tunnel drift step recovery diode

US11322626B2 · kind B2 · utility

Assignees

• Lawrence Livermore National Security, LLC · US
• BAE Systems Land & Armaments L.P. · US
• The Government of the United States, as represented by the Secretary of the Army · US

Inventors

• Lars Voss · Livermore, US
• Adam Conway · San Francisco, US
• Luis M. Hernandez · Orlando, US
• Mark Rader · Decatur, US

Key dates

• Filing date: Oct 27, 2020
• Grant date: May 3, 2022
• Expiry date: Oct 27, 2040

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/8325

Abstract

Devices, methods and techniques are disclosed for providing a multi-layer diode without voids between layers. In one example aspect, a multi-stack diode includes at least two Drift Step Recovery Diodes (DSRDs). Each DSRD comprises a first layer having a first type of dopant, a second layer forming a region with at least ten times lower concentration of dopants compared to the adjacent layers, and a third layer having a second type of dopant that is opposite to the first type of dopant. The first layer of a second DSRD is positioned on top of the third layer of first DSRD. The first layer of the second DSRD and the third layer of the first DSRD are degenerate to form a tunneling diode at an interface of the first DSRD and second DSRD, the tunneling diode demonstrating a linear current-voltage characteristic.