Semiconductor device with single electron counting capability
US11322641B2 · kind B2 · utility
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3References
14Claims
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Key dates
| Filing date | Jul 18, 2018 |
| Grant date | May 3, 2022 |
| Priority date | — |
| Expiry date | Sep 29, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F77/959
Abstract
The semiconductor device comprises a bipolar transistor with emitter, base and collector, a current or voltage source electrically connected with the emitter, and a quenching component electrically connected with the collector, the bipolar transistor being configured for operation at a collector-to-base voltage above the breakdown voltage.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.