Georg Röhrer
21Patents
4h-index
16Co-inventors
56Inventor score
Filing activity: Oct 25, 2004 → May 29, 2020
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US9575141B2 | Hall sensor with hall sensor elements that respectively comprise element terminals and are interconnected in a circuit lattice | Physics | 6 | Active |
| US9551765B2 | Method for operating a hall sensor arrangement and hall sensor arrangement | Physics | 5 | Active |
| US7566624B2 | Method for the production of transistor structures with LDD | Electricity | 5 | Expired |
| US9349943B2 | Hall sensor semiconductor component and method for operating the hall sensor semiconductor component | Physics | 4 | Active |
| US7863170B2 | Semiconductor body comprising a transistor structure and method for producing a transistor structure | Electricity | 3 | Active |
| US8212318B2 | High-voltage transistor with improved high stride performance | Electricity | 3 | Active |
| US11668636B2 | Particle density sensor using evanescent wave of waveguide | Physics | 1 | Active |
| US9276109B2 | High-voltage transistor with high current load capacity and method for its production | Electricity | 1 | Active |
| US8399937B2 | Semiconductor body and method for the design of a semiconductor body with a connecting line | Electricity | 1 | Active |
| US7977197B2 | Method for fabricating a transistor with reliable source doping | Electricity | 1 | Active |
| US8796743B2 | Light-sensitive component | Electricity | 0 | Active |
| US12132132B2 | Semiconductor body, avalanche photodiode and method for fabricating a semiconductor body | Electricity | 0 | Active |
| US9093527B2 | High-voltage transistor and component containing the latter | Electricity | 0 | Active |
| US11355653B2 | SPAD device for excess bias monitoring | Physics | 0 | Active |
| US9698257B2 | Symmetric LDMOS transistor including a well of a first type of conductivity and wells of an opposite second type of conductivity | Electricity | 0 | Active |
| US8273621B2 | MOS-FET having a channel connection, and method for the production of a MOS-FET having a channel connection | Electricity | 0 | Active |
| US11181418B2 | Avalanche diode arrangement and method for controlling an avalanche diode arrangement | Electricity | 0 | Active |
| US10042010B2 | Hall sensor and sensor arrangement | Physics | 0 | Active |
| US11322641B2 | Semiconductor device with single electron counting capability | Electricity | 0 | Active |
| US11329554B2 | Charge pump circuit arrangement | Electricity | 0 | Active |
| US8227882B2 | Light-sensitive component with increased blue sensitivity, method for the production thereof, and operating method | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.