Buried contact layer for UV emitting device

US11322647B2 · kind B2 · utility

Assignee

• Silanna UV Technologies Pte Ltd · SG

Inventors

• Johnny Cai Tang · Parramatta, AU
• Chun To Lee · Parramatta, AU
• Guilherme Tosi · Brisbane, AU
• Christopher Flynn · Hornsby, AU
• Liam Anderson · Parramatta, AU
• Timothy William Bray · Vancouver, CA
• Petar Atanackovic · Adelaide, AU

Key dates

• Filing date: May 1, 2020
• Grant date: May 3, 2022
• Expiry date: Sep 6, 2040

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/8162

Abstract

In some embodiments, a light emitting structure comprises a layered semiconductor stack comprising a first set of doped layers, a second layer, a light emitting layer positioned between the first set of doped layers and the second layer, and an electrical contact to the first set of doped layers. The first set of doped layers can comprise a first sub-layer, a second sub-layer, and a third sub-layer, where the third sub-layer is adjacent to the light emitting layer. The electrical contact to the first set of doped layers can be made to the second sub-layer. The first, second and third sub-layers can be doped n-type, and an electrical conductivity of the second sub-layer can be higher than an electrical conductivity of the first and third sub-layers. In some cases, the second sub-layer can absorb more light emitted from the light emitting layer than the first or third sub-layers.