Strained AlGaInP layers for efficient electron and hole blocking in light emitting devices
US11322650B2 · kind B2 · utility
0Cited by
8References
20Claims
0Family size
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Key dates
| Filing date | Jul 12, 2018 |
| Grant date | May 3, 2022 |
| Priority date | — |
| Expiry date | Sep 28, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/825
Abstract
A light-emitting device is disclosed. The light emitting device includes an electron blocking layer, a hole blocking layer, wherein at least a portion of the hole blocking layer is arranged to have a compressive strain, and an active layer disposed between the hole blocking layer and the electron blocking layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.