Methods for producing composite GaN nanocolumns and light emitting structures made from the methods
US11322652B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 13, 2016 |
| Grant date | May 3, 2022 |
| Priority date | — |
| Expiry date | Dec 13, 2036 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/544
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method for growing on a substrate strongly aligned uniform cross-section semiconductor composite nanocolumns is disclosed. The method includes: (a) forming faceted pyramidal pits on the substrate surface; (b) initiating nucleation on the facets of the pits; and; (c) promoting the growth of nuclei toward the center of the pits where they coalesce with twinning and grow afterwards together as composite nanocolumns. Multi-quantum-well, core-shell nanocolumn heterostructures can be grown on the sidewalls of the nanocolumns. Furthermore, a continuous semiconductor epitaxial layer can be formed through the overgrowth of the nanocolumns to facilitate fabrication of high-quality planar device structures or for light emitting structures.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.