High dielectric constant composite material and application thereof
US11322701B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 6, 2017 |
| Grant date | May 3, 2022 |
| Priority date | — |
| Expiry date | Feb 24, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K10/466
Abstract
A high dielectric constant composite material and method for preparing organic thin film transistor using the material as dielectric. The method includes: using sol-gel method, hydrolyzing terminal group-containing silane coupling agent to form functional terminal group-containing silica sol, cross-linked with organic polymer to form composite sol as material of dielectric of organic thin film transistor; forming film by solution method such as spin coating, dip coating, inkjet printing, 3D printing, etc., forming dielectric after curing; preparing semiconductor and electrode respectively to prepare organic thin film transistor device, which, based on composite dielectric material, has mobility of 5 cm2/V·s, exceeding that of using SiO2, having low threshold voltage and no hysteresis effect. Compared with traditional processes like SiO2 thermal oxidation, above method has advantages of simple process, low cost, suitable for large-area preparation, with great market application value.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.