Resistance change device, manufacturing method for the same, and storage apparatus
US11328769B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Aug 6, 2019 |
| Grant date | May 10, 2022 |
| Priority date | — |
| Expiry date | Jan 13, 2040 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E60/10
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A resistance change device includes a first resistance change layer that occludes and discharges ions of at least one type, and resistance of the first resistance change layer, changes in accordance with an amount of the ions in such a manner that the resistance decreases when the ions are discharged and the resistance increases when the ions are occluded; a second resistance change layer that occludes and discharges the ions, and resistance of the second resistance change layer changes in accordance with the amount of the ions in such a manner that the resistance increases when the ions are discharged and the resistance decreases when the ions are occluded; and an ion conductive layer that carries the ions and is provided between the first resistance change layer and the second resistance change layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.