Hideyuki Noshiro
23Patents
5h-index
21Co-inventors
69Inventor score
Filing activity: Mar 13, 1992 → Aug 6, 2019
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5874364A | Thin film deposition method, capacitor device and method for fabricating the same, and semiconductor device and method for fabricating the same | Electricity | 50 | Expired |
| US5679213A | Method for patterning a metal film | Electricity | 17 | Expired |
| US6515843B2 | Semiconductor capacitive device | Electricity | 12 | Expired |
| US6495412B1 | Semiconductor device having a ferroelectric capacitor and a fabrication process thereof | Electricity | 11 | Expired |
| US6271077A | Thin film deposition method, capacitor device and method for fabricating the same, and semiconductor device and method for fabricating the same | Electricity | 8 | Expired |
| US7029984B2 | Method for fabricating semiconductor device | Electricity | 4 | Expired |
| US6060736A | Semiconductor device and method of manufacturing the same | Electricity | 4 | Expired |
| US8106377B2 | Resistance change element and method of manufacturing the same | Electricity | 3 | Active |
| US8227782B2 | Resistance change element and method of manufacturing the same | Electricity | 3 | Active |
| US6617626B2 | Ferroelectric semiconductor memory device and a fabrication process thereof | Electricity | 3 | Expired |
| US8482953B2 | Composite resistance variable element and method for manufacturing the same | Electricity | 3 | Active |
| US5248663A | Method of forming oxide superconductor patterns | Emerging Cross-Sectional Technologies | 3 | Expired |
| US6291291A | Semiconductor device and method of manufacturing the same | Electricity | 2 | Expired |
| US8533938B2 | Method of manufacturing resistance change element | Emerging Cross-Sectional Technologies | 1 | Active |
| US8350244B2 | Variable resistance device, method for manufacturing variable resistance device, and semiconductor storage device using variable resistance device | Physics | 1 | Active |
| US6777287B2 | Ferroelectric semiconductor memory device and a fabrication process thereof | Electricity | 1 | Expired |
| US7038264B2 | Semiconductor device and method for manufacturing the same | Electricity | 0 | Expired |
| US11328769B2 | Resistance change device, manufacturing method for the same, and storage apparatus | Emerging Cross-Sectional Technologies | 0 | Active |
| US8102003B2 | Resistance memory element, method of manufacturing resistance memory element and semiconductor memory device | Electricity | 0 | Active |
| US8811058B2 | Resistance change element, method for manufacturing the same, and semiconductor memory | Physics | 0 | Active |
| US9218869B2 | Memory device | Physics | 0 | Active |
| US6812041B2 | Method of manufacturing ferroelectric capacitor using a sintering assistance film | Electricity | 0 | Expired |
| US8750034B2 | Magnetoresistance element and semiconductor memory device | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.