Sputtering device
US11328913B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 14, 2018 |
| Grant date | May 10, 2022 |
| Priority date | — |
| Expiry date | Apr 15, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/3323
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The purpose of the present invention is to improve uniformity of film deposition by a plasma-based sputtering device. Provided is a sputtering device 100 for depositing a film on a substrate W through sputtering of targets T by using plasma P, said sputtering device being provided with a vacuum chamber 2 which can be evacuated to a vacuum and into which a gas is to be introduced; a substrate holding part 3 for holding the substrate W inside the vacuum chamber 2; target holding parts 4 for holding the targets T inside the vacuum chamber 2; multiple antennas 5 which are arranged along a surface of the substrate W held by the substrate holding part 3 and generate plasma P; and a reciprocal scanning mechanism 14 for scanning back and forth the substrate holding part 3 along the arrangement direction X of the multiple antennas 5.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.