Patent · US Active

Integrated circuit device

US11329044B2 · kind B2 · utility

0Cited by
3References
20Claims
0Family size

Assignee

Inventors

Key dates

Filing dateNov 18, 2020
Grant dateMay 10, 2022
Priority date
Expiry dateNov 18, 2040

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10D84/038

Abstract

An integrated circuit device is provided. The integrated circuit device includes a fin-type active region that extends in a first direction on a substrate, a gate structure that intersects with the fin-type active region and extends in a second direction, perpendicular to the first direction, on the substrate, and a first contact structure that is disposed on the gate structure, and has a greater width at a top surface than a bottom surface thereof.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.