Magnetic tunnel junction element with Ru hard mask for use in magnetic random-access memory
US11329100B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 23, 2019 |
| Grant date | May 10, 2022 |
| Priority date | — |
| Expiry date | Jun 21, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/85
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A magnetic memory element having a Ru hard mask layer. The use of Ru advantageously allows for closer spacing of adjacent magnetic memory elements leading to increased data density. In addition, the use of Ru as a hard mask reduces parasitic electrical resistance by virtue of the fact that Ru does not oxidize in ordinary manufacturing environments. The magnetic memory element can be formed by depositing a plurality of memory element layers, depositing a Ru hard mask layer, depositing a RIEable layer over the Ru hard mask layer, and forming a photoresist mask over the hard mask layer. A reactive ion etching can be performed to transfer the image of the photoresist mask onto the RIEable layer to form a RIEable mask. An ion etching can then be performed to transfer the image of the RIAable mask onto the underlying Ru hard mask and underlying memory element layers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.