4H-SiC MOSFET device and manufacturing method thereof

US11329131B2 · kind B2 · utility

Assignee

• STMicroelectronics SA

Inventors

• Mario Giuseppe Saggio · Nettuno, IT
• Edoardo ZANETTI · Valverde, IT
• Alfio GUARNERA · Trecastagni, IT

Key dates

• Filing date: Nov 12, 2020
• Grant date: May 10, 2022
• Expiry date: Nov 12, 2040

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/252

Abstract

A MOSFET device includes a semiconductor body having a first and a second face. A source terminal of the MOSFET device includes a doped region which extends at the first face of the semiconductor body and a metal layer electrically coupled to the doped region. A drain terminal extends at the second face of the semiconductor body. The doped region includes a first sub-region having a first doping level and a first depth, and a second sub-region having a second doping level and a second depth. At least one among the second doping level and the second maximum depth has a value which is higher than a respective value of the first doping level and the first maximum depth. The metal layer is in electrical contact with the source terminal exclusively through the second sub-region.