Semiconductor device and method of manufacture
US11329140B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 17, 2020 |
| Grant date | May 10, 2022 |
| Priority date | — |
| Expiry date | Mar 27, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/853
Abstract
A method of forming a gas spacer in a semiconductor device and a semiconductor device including the same are disclosed. In accordance with an embodiment, a method includes forming a gate stack over a substrate; forming a first gate spacer on sidewalls of the gate stack; forming a second gate spacer on sidewalls of the first gate spacer; removing the second gate spacer using an etching process to form a first opening, the etching process being performed at a temperature less than 0° C., the etching process using an etching solution including hydrogen fluoride; and depositing a dielectric layer over the first gate spacer and the gate stack, the dielectric layer sealing a gas spacer in the first opening.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.