Inventor · Taoyuan, TW

Shiang-Bau Wang

79Patents
8h-index
65Co-inventors
81Inventor score

Filing activity: Nov 4, 1999 → May 15, 2024

Most-cited inventions

PatentTitleAreaCited byStatus
US6201208A Method and apparatus for plasma processing with control of ion energy distribution at the substrates Electricity 120 Expired
US6586886B1 Gas distribution plate electrode for a plasma reactor Electricity 68 Expired
US7947551B1 Method of forming a shallow trench isolation structure Electricity 28 Active
US8609497B2 Method of dual EPI process for semiconductor device Electricity 26 Active
US6652712B2 Inductive antenna for a plasma reactor producing reduced fluorine dissociation Electricity 25 Expired
US6667577B2 Plasma reactor with spoke antenna having a VHF mode with the spokes in phase Electricity 17 Expired
US8071481B2 Method for forming highly strained source/drain trenches Electricity 11 Active
US6677712B2 Gas distribution plate electrode for a plasma receptor Electricity 11 Expired
US8093146B2 Method of fabricating gate electrode using a hard mask with spacers Electricity 8 Active
US8598675B2 Isolation structure profile for gap filling Electricity 8 Active
US7301645B2 In-situ critical dimension measurement Electricity 8 Expired
US8598661B2 Epitaxial process for forming semiconductor devices Electricity 7 Active
US8193094B2 Post CMP planarization by cluster ION beam etch Electricity 7 Active
US10269787B2 Metal gate structure cutting process Electricity 7 Active
US9218974B2 Sidewall free CESL for enlarging ILD gap-fill window Emerging Cross-Sectional Technologies 6 Active
US8372755B2 Multilayer hard mask Electricity 6 Active
US7732878B2 MOS devices with continuous contact etch stop layer Electricity 6 Active
US8383485B2 Epitaxial process for forming semiconductor devices Electricity 6 Active
US9613959B2 Method of forming metal gate to mitigate antenna defect Electricity 6 Active
US8461015B2 STI structure and method of forming bottom void in same Electricity 5 Active
US8900957B2 Method of dual epi process for semiconductor device Electricity 5 Active
US10304178B2 Method and system for diagnosing a semiconductor wafer Physics 5 Active
US8361338B2 Hard mask removal method Electricity 5 Active
US8822304B2 Isolation structure profile for gap filing Electricity 4 Active
US11069579B2 Semiconductor device and method Electricity 4 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.