Patent · US Active

Optoelectronic device manufacturing method

US11329188B2 · kind B2 · utility

1Cited by
0References
18Claims
0Family size

Assignee

Inventors

Key dates

Filing dateAug 12, 2020
Grant dateMay 10, 2022
Priority date
Expiry dateAug 12, 2040

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10H29/142
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

A method of manufacturing electronic devices, including the successive steps of: a) growing, on a surface of a first substrate, a stack including at least one semiconductor layer; b) bonding a second substrate on a surface of the stack opposite to the first substrate, and then removing the first substrate; c) bonding a third substrate to a surface of the stack opposite to the second substrate, and then removing the second substrate; d) cutting the assembly including the third substrate and the stack into a plurality of first chips each including a portion of the stack; and e) bonding each first chip, by its surface opposite to the third substrate, to a surface of a fourth semiconductor substrate inside and on top of which a plurality of integrated control circuits have been previously formed.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.