Methods of forming a pattern and methods of fabricating a semiconductor device
US11333979B2 · kind B2 · utility
0Cited by
3References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 26, 2020 |
| Grant date | May 17, 2022 |
| Priority date | — |
| Expiry date | Sep 13, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/32139
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Disclosed are methods of forming a pattern and methods of fabricating a semiconductor device. A method of fabricating a semiconductor device may include providing a substrate comprising a resist layer on the substrate and coating a compound on the resist layer to form a charge dissipation layer. The charge dissipation layer may include a conductive polymer and a metal complex.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.