Byounghoon Lee
15Patents
2h-index
20Co-inventors
50Inventor score
Filing activity: Jul 3, 2008 → Jun 3, 2022
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US8343594B2 | Film formation method and apparatus for semiconductor process | Chemistry; Metallurgy | 6 | Active |
| US11387236B2 | Semiconductor device | Electricity | 2 | Active |
| US11145738B2 | Semiconductor devices having multiple barrier patterns | Electricity | 1 | Active |
| US11296078B2 | Semiconductor device | Electricity | 1 | Active |
| US12062661B2 | Semiconductor device | Electricity | 0 | Active |
| US12251690B2 | Single atom catalyst and method of forming the same | Performing Operations; Transporting | 0 | Active |
| US11333979B2 | Methods of forming a pattern and methods of fabricating a semiconductor device | Electricity | 0 | Active |
| US11335701B2 | Semiconductor switching devices having ferroelectric layers therein and methods of fabricating same | Electricity | 0 | Active |
| US11610975B2 | Semiconductor devices having multiple barrier patterns | Electricity | 0 | Active |
| US12080712B2 | Semiconductor device | Electricity | 0 | Active |
| US11778835B2 | Semiconductor switching devices having ferroelectric layers therein and methods of fabricating same | Electricity | 0 | Active |
| US11217677B2 | Semiconductor device and method of fabricating the same | Electricity | 0 | Active |
| US10950709B2 | Semiconductor device | Electricity | 0 | Active |
| US12100736B2 | Semiconductor device having channel layers spaced apart in vertical direction | Electricity | 0 | Active |
| US11948994B2 | Semiconductor device and method of fabricating the same | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.