Integrated circuits having cross-couple constructs and semiconductor devices including integrated circuits
US11335673B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 15, 2018 |
| Grant date | May 17, 2022 |
| Priority date | — |
| Expiry date | Oct 19, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/975
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
An integrated circuit may include a first active region and a second active region, and the first and second active regions may extend on a substrate in a first horizontal direction in parallel to each other and have different conductivity types from each other. A first gate line may extend in a second horizontal direction crossing the first horizontal direction, and may form a first transistor with the first active region. The first transistor may include a gate to which a first input signal is applied. The first gate line may include a first partial gate line that overlaps the first active region in a perpendicular direction and that has an end on a region between the first and second active regions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.