Methods for manufacturing semiconductor device
US11335827B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 27, 2020 |
| Grant date | May 17, 2022 |
| Priority date | — |
| Expiry date | May 22, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/825
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for manufacturing a semiconductor device is provided. The method includes forming a plurality of light-emitting elements on a first substrate and forming a first pattern array on a second substrate. The method also includes transferring the plurality of light-emitting elements from the first substrate to the second substrate. The method further includes forming the first pattern array on a third substrate. In addition, the method includes transferring the plurality of light-emitting elements from the second substrate to the third substrate. The method also includes forming a second pattern array on a fourth substrate. The method further includes transferring the plurality of light-emitting elements from the third substrate to the fourth substrate. The pitch between the plurality of light-emitting elements on the first substrate is different than the pitch of the first pattern array.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.