Silicon carbide ingot manufacturing method and silicon carbide ingot manufactured thereby
US11339497B2 · kind B2 · utility
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Key dates
| Filing date | Aug 23, 2021 |
| Grant date | May 24, 2022 |
| Priority date | — |
| Expiry date | Aug 23, 2041 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC01B32/956
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A silicon carbide ingot manufacturing method and a silicon carbide ingot manufacturing system are provided. The silicon carbide ingot manufacturing method and the silicon carbide ingot manufacturing system may change a temperature gradient depending on the growth of an ingot by implementing a guide which has a tilted angle to an external direction from the interior of a reactor, in an operation to grow an ingot during a silicon carbide ingot manufacturing process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.