Senic Inc.
26Patents
26Active
26Granted
52Portfolio score
Filing activity: Dec 20, 2017 → Feb 16, 2023
Most-cited patents
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US11359306B2 | Method for preparing a SiC ingot and device for preparing a SiC ingot wherein electrical resistance of crucible body is 2.9 ohms or more | Chemistry; Metallurgy | 1 | Active |
| US11708644B2 | Method for preparing SiC ingot, method for preparing SiC wafer and the SiC wafer prepared therefrom | Electricity | 1 | Active |
| US12270122B2 | Silicon carbide wafer and semiconductor device | Electricity | 0 | Active |
| US12359344B2 | Silicon carbide powder and method for manufacturing silicon carbide ingot using the same | Chemistry; Metallurgy | 0 | Active |
| US11474012B2 | Method for preparing silicon carbide wafer and silicon carbide wafer | Electricity | 0 | Active |
| US11646209B2 | Method of cleaning wafer and wafer with reduced impurities | Electricity | 0 | Active |
| US12037704B2 | Silicon carbide wafer and method of manufacturing same | Electricity | 0 | Active |
| US11862685B2 | Wafer and method of manufacturing wafer | Electricity | 0 | Active |
| US12320033B2 | Silicon carbide wafer and method of preparing the same | Electricity | 0 | Active |
| US11225730B2 | Method for producing ingot, raw material for ingot growth, and method for preparing the raw material | Chemistry; Metallurgy | 0 | Active |
| US11566344B2 | Silicon carbide ingot, wafer, method for producing a silicon carbide ingot, and method for manufacturing a wafer | Chemistry; Metallurgy | 0 | Active |
| US11339498B2 | Method for growing single crystal silicon carbide ingot having large diameter | Chemistry; Metallurgy | 0 | Active |
| US11268209B2 | Seed crystal including protective film including a first layer with first filler and second layer with second filler | Chemistry; Metallurgy | 0 | Active |
| US11969917B2 | Manufacturing method of silicon carbide wafer, silicon carbide wafer and system for manufacturing wafer | Performing Operations; Transporting | 0 | Active |
| US11939698B2 | Wafer manufacturing method, epitaxial wafer manufacturing method, and wafer and epitaxial wafer manufactured thereby | Electricity | 0 | Active |
| US11289576B2 | Wafer and method of manufactruring wafer | Electricity | 0 | Active |
| US11856678B2 | Method of measuring a graphite article, apparatus for a measurement, and ingot growing system | Electricity | 0 | Active |
| US12325933B2 | Silicon carbide powder, method for manufacturing silicon carbide ingot using the same, and silicon carbide wafer | Chemistry; Metallurgy | 0 | Active |
| US11447889B2 | Adhesive layer of seed crystal, method for preparing a laminate using the same, and method for preparing a wafer | Chemistry; Metallurgy | 0 | Active |
| US11591711B2 | Method and system for producing silicon carbide ingot | Chemistry; Metallurgy | 0 | Active |
| US11339497B2 | Silicon carbide ingot manufacturing method and silicon carbide ingot manufactured thereby | Chemistry; Metallurgy | 0 | Active |
| US11466383B2 | Silicon carbide ingot, method of preparing the same, and method for preparing silicon carbide wafer | Electricity | 0 | Active |
| US12136653B2 | Silicon carbide wafer and semiconductor device applied the same | Electricity | 0 | Active |
| US11795572B2 | Method of manufacturing a silicon carbide ingot comprising moving a heater surrounding a reactor to induce silicon carbide raw materials to sublimate and growing the silicon carbide ingot on a seed crystal | Chemistry; Metallurgy | 0 | Active |
| US11859305B2 | Apparatus for growing a SiC single crystal ingot comprising a filter unit having a porous body surrounding an opening unit that is located under a seed crystal | Chemistry; Metallurgy | 0 | Active |
Source: USPTO / EPO open patent data. Counts and citation impact are objective bibliographic measures.