Method for growing single crystal silicon carbide ingot having large diameter
US11339498B2 · kind B2 · utility
0Cited by
1References
9Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 20, 2017 |
| Grant date | May 24, 2022 |
| Priority date | — |
| Expiry date | Nov 5, 2038 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B29/36
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method in which a carbonaceous protective film is formed on a rear surface of a single crystal SiC seed, the seed is placed in a reaction container without adhesion, and then single crystal SiC is grown from a SiC raw material on a front surface of the seed allows the seed to grow to a single crystal ingot having a large diameter since the absence of adhesion of the seed to a holder prevents the generation of warps or cracks attributed to a difference in thermal expansion coefficient between the seed and the holder during heating.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.