Real-time monitoring microscopic imaging system for nitride MOCVD epitaxial growth mode

US11340440B2 · kind B2 · utility

Assignee

• University of Electronic Science and Technology of China · CN

Inventors

• Chao Wang · Tainan, TW
• Xueke Gou · Sichuan, CN
• Jing Jiang · Beijing, CN
• Jun Hu · 林湖乡, CN
• Zezhan Zhang · Sichuan, CN
• Yang Yang · Shanghai, CN
• Ying Duan · San Diego, US
• Congjun Wu · Hefei, CN
• Yueming Wang · Hangzhou City, CN

Key dates

• Filing date: Mar 22, 2019
• Grant date: May 24, 2022
• Expiry date: Oct 28, 2039

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/02271
• WIPO field: Optics
• WIPO sector: Instruments

Abstract

A real-time monitoring microscopic imaging system for nitride MOCVD (metal organic chemical vapor deposition) epitaxial growth mode includes an observation window, an imaging lens set, a CCD (charge coupled device) camera, an image capture card and an image storage and display device, wherein: the observation window is provided at a top portion of a graphite carrier in an MOCVD reaction chamber and is formed by a thicker quartz glass to prevent temperature in the reaction chamber from damaging the lenses. The microscopic imaging system provided by the present invention has the resolution better than 1 μm, is able to distinguish the 2D growth mode and the 3D growth mode, observe whether the surface of the epitaxial wafer has screw dislocations in the MOCVD process, so as to observe the growth mode of the MOCVD epitaxial wafer in real time during the growth process.