High density plasma chemical vapor deposition chamber and method of using
US11342164B2 · kind B2 · utility
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64References
20Claims
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Key dates
| Filing date | Jan 5, 2021 |
| Grant date | May 24, 2022 |
| Priority date | — |
| Expiry date | Jan 5, 2041 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/52
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A high density plasma chemical vapor deposition (HDP CVD) chamber includes a nozzle including a base having a hollow center portion for conducting gas; a tip coupled to the base and having an opening formed therein for conducting gas from the base to the exterior of the nozzle. The HDP CVD chamber further includes a baffle positioned in a top portion of the HDP CVD chamber, wherein the baffle is equipped with an adjustable baffle nozzle.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.