Patent · US Active

Multi-dielectric structure in two-layer embedded trace substrate

US11342254B2 · kind B2 · utility

0Cited by

2References

17Claims

0Family size

Assignee

QUALCOMM Incorporated · US

Inventors

Joan Rey Villarba BUOT · Escondido, US
Kuiwon Kang · San Diego, US
Joonsuk Park · San Diego, US
Karthikeyan Dhandapani · Chandler, US

Key dates

Filing date	Mar 16, 2020
Grant date	May 24, 2022
Priority date	—
Expiry date	Mar 16, 2040

Classification

Technology area (CPC H)Electricity
CPC primaryH05K1/036
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

Certain aspects of the present disclosure generally relate to an embedded trace substrate having at least two different dielectric layers with different dielectric materials and methods for fabricating the same. One example embedded trace substrate generally includes a first metal layer; a first dielectric layer disposed below the first metal layer and comprising a first dielectric material; a second dielectric layer disposed below the first dielectric layer and comprising a second dielectric material, wherein the second dielectric material of the second dielectric layer is stiffer than the first dielectric material of the first dielectric layer; and a second metal layer disposed below the second dielectric layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.