Electronic device including a transistor and a shield electrode
US11342424B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 13, 2020 |
| Grant date | May 24, 2022 |
| Priority date | — |
| Expiry date | Apr 13, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/516
Abstract
An electronic device can include a substrate, an active region of a transistor, and a shield electrode. The substrate can define a trench and include a mesa adjacent to the trench, and the shield electrode can be within the trench. In an embodiment, the electronic device can further include an active region of a transistor within the mesa and an insulating layer including a thicker section and a thinner section closer to a bottom of the trench. In another embodiment, the electronic device can include a body region and a doped region within the mesa and spaced apart from the body region by a semiconductor region. The doped region can have a dopant concentration that is higher than a dopant concentration of the semiconductor region and a portion of the substrate underlying the doped region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.