Semiconductor device and method
US11342454B2 · kind B2 · utility
0Cited by
3References
20Claims
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Assignee
Inventors
Key dates
| Filing date | Jun 22, 2020 |
| Grant date | May 24, 2022 |
| Priority date | — |
| Expiry date | Jun 22, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In accordance with some embodiments, a method is provided. The method includes: forming a semiconductor fin protruding from a substrate; depositing a spacer layer over the semiconductor fin; after the depositing the spacer layer over the semiconductor fin, implanting a first dopant in the spacer layer and depositing a dopant layer of the first dopant on the spacer layer in alternating repeating steps; removing the dopant layer; and performing a thermal anneal process to drive the first dopant into the semiconductor fin from the spacer layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.