Method of forming oxide semiconductor field effect transistor
US11342465B2 · kind B2 · utility
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12References
7Claims
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Key dates
| Filing date | Jan 3, 2021 |
| Grant date | May 24, 2022 |
| Priority date | — |
| Expiry date | Jan 29, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D99/00
Abstract
An oxide semiconductor field effect transistor (OSFET) includes a first insulating layer, a source, a drain, a U-shaped channel layer and a metal gate. The first insulating layer is disposed on a substrate. The source and the drain are disposed in the first insulating layer. The U-shaped channel layer is sandwiched by the source and the drain. The metal gate is disposed on the U-shaped channel layer, wherein the U-shaped channel layer includes at least an oxide semiconductor layer. The present invention also provides a method for forming said oxide semiconductor field effect transistor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.