Thin film stacks for group V doping, photovoltaic devices including the same, and methods for forming photovoltaic devices with thin film stacks

US11342471B2 · kind B2 · utility

Assignee

• First Solar, Inc. · US

Inventors

• Sachit Grover · Campbell, US
• Chungho Lee · Sunnyvale, US
• Xiaoping Li · Lo Wu, CN
• Dingyuan Lu · San Jose, US
• Roger Malik · Summit, US
• Gang Xiong · Beaverton, US

Key dates

• Filing date: Feb 27, 2018
• Grant date: May 24, 2022
• Expiry date: Feb 27, 2038

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y02E10/547

Abstract

According to the embodiments provided herein, a method for forming a photovoltaic device can include depositing a plurality of semiconductor layers. The plurality of semiconductor layers can include a doped layer that is doped with a group V dopant. The doped layer can include cadmium selenide or cadmium telluride. The method can include annealing the plurality of semiconductor layers to form an absorber layer.