Method for preparing avalanche photodiode

US11342474B2 · kind B2 · utility

Assignee

• THE 13TH RESEARCH INSTITUTE OF CHINA ELECTRONICS TECHNOLOGY GROUP CORPORATION · CN

Inventors

• Xingye Zhou · Shijiazhuang, CN
• Zhihong Feng · Shijiazhuang, CN
• Yuanjie Lv · Shijiazhuang, CN
• Xin Tan · Beijing, CN
• Yuangang Wang · Nanhu, CN
• Xubo Song · Shijiazhuang, CN
• Jia Li · Shijiazhuang, CN
• Yulong Fang · Shijiazhuang, CN

Key dates

• Filing date: Sep 24, 2020
• Grant date: May 24, 2022
• Expiry date: Nov 4, 2040

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10F77/241

Abstract

A method for preparing an avalanche photodiode includes preparing a mesa on a wafer, growing a sacrificial layer on an upper surface of the wafer and a side surface of the mesa, removing the sacrificial layer in an ohmic contact electrode region of the wafer, preparing an ohmic contact electrode in the ohmic contact electrode region of the wafer, removing the sacrificial layer in a non-mesa region of the wafer, growing a passivation layer on the upper surface of the wafer and the side surface of the mesa, removing the passivation layer on the upper surface of the mesa of the wafer and the passivation layer in the non-mesa region of the wafer corresponding to the ohmic contact electrode region, and removing the sacrificial layer on the upper surface of the mesa of the wafer.