Gallium nitride cross-gap light emitters based on unipolar-doped tunneling structures

US11342482B2 · kind B2 · utility

Assignees

• Wright State University · US
• The Government of the United States of America, as represented by the Secretary of the Navy · US
• Ohio State Innovation Foundation · US

Inventors

• Elliott R. Brown · Beavercreek, US
• Weidong Zhang · Shanghai, CN
• Tyler Growden · Dublin, US
• Paul R. Berger · Summit, US
• David Storm · Waldorf, US
• David Meyer · Washington, US

Key dates

• Filing date: Oct 28, 2019
• Grant date: May 24, 2022
• Expiry date: Oct 28, 2039

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/851
• WIPO field: Optics
• WIPO sector: Instruments

Abstract

Gallium nitride based devices and, more particularly to the generation of holes in gallium nitride based devices lacking p-type doping, and their use in light emitting diodes and lasers, both edge emitting and vertical emitting. By tailoring the intrinsic design, a wide range of wavelengths can be emitted from near-infrared to mid ultraviolet, depending upon the design of the adjacent cross-gap recombination zone. The innovation also provides for novel circuits and unique applications, particularly for water sterilization.