David Meyer
3Patents
2h-index
8Co-inventors
41Inventor score
Filing activity: Oct 30, 1987 → Oct 28, 2019
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US10461216B2 | Gallium nitride cross-gap light emitters based on unipolar-doped tunneling structures | Electricity | 2 | Active |
| US4814290A | Method for providing increased dopant concentration in selected regions of semiconductor devices | Electricity | 2 | Expired |
| US11342482B2 | Gallium nitride cross-gap light emitters based on unipolar-doped tunneling structures | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.